MMBTA44 npn silicon 500v, 0.1a, 350mw epitaxial transistor elektronische bauelemente 21-sep-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high voltage transistor marking product marking code MMBTA44 3d symbol maximum ratings (at t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo 500 v collector - emitter voltage v ceo 400 v emitter - base voltage v ebo 6 v collector current - continuous i c 0.1 a collector power dissipation p c 350 mw junction, storage temperature t j , t stg 150, -55~150 electrical characteristics (at t a = 25 c unless otherwise specified) parameter test conditions symbol min. typ. max. unit collector-base breakdown voltage i c =100a, i e =0 v (br)cbo 500 - - v collector-emitter breakdown voltage i c =1ma, i b =0 v (br)ceo 400 - - v emitter-base breakdown voltage i e =10a, i c =0 v (br)ebo 6 - - v collector cut-off current v cb =400v, i e =0 i cbo - - 0.1 a emitter cut-off current v eb =4v, i c =0 i ebo - - 0.1 a dc current gain v ce =10v, i c =1ma h fe1 * 40 - - v ce =10v, i c =10ma h fe2 * 50 - 200 v ce =10v, i c =50ma h fe3 * 45 - - v ce =10v, i c =100ma h fe4 * 40 - - collector-emitter saturation voltage i c =1ma, i b =0.1ma v ce(sat)1 * - - 0.4 v i c =10ma, i b =1ma v ce(sat)2 * - - 0.5 v i c =50ma, i b =5ma v ce(sat)3 * - - 0.75 v base-emitter saturation voltage i c =10ma, i b =1ma v be(sat) * - - 0.75 v output capacitance v cb =20v, i e =0, f=1mhz c obo - - 7 pf input capacitance v eb =0.5v, i c =0, f=1mhz c ibo - - 130 pf *pulse test so t -23 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50 top view a l c b d g h j f k e 1 2 3 1 2 3
MMBTA44 npn silicon 500v, 0.1a, 350mw epitaxial transistor elektronische bauelemente 21-sep-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
